JEDEC JESD90

JEDEC JESD90

Click here to purchase
This document describes an accelerated stress and test methodology for measuring device parameter changes of a single p-channel MOSFET after Negative Bias Temperature Instability (NBTI) stress at dc bias conditions. This document gives a procedure to investigate NBTI stress in a symmetric voltage condition with the channel inverted (VGS < 0) and no channel conduction (VDS = 0).There can be NBTI degradation during channel conduction (VGS < 0, VDS < 0), however, this document does not cover this phenomena.

Product Details

Published:
11/01/2004
Number of Pages:
19
File Size:
1 file , 94 KB

You may also like

JEDEC JEB 5-A (R1984)

JEDEC JEB 5-A (R1984)

METHODS OF MEASUREMENT FOR SEMICONDUCTOR LOGIC GATING MICROCIRCUITSstandard by JEDEC Solid State Technology Association, 01/01/1970

JEDEC JEP114.01

JEDEC JEP114.01

GUIDELINES FOR PARTICLE IMPACT NOISE DETECTION (PIND) TESTING, OPERATOR TRAINING, AND CERTIFICATIONstandard by JEDEC Solid State Technology Association, 10/01/2007

JEDEC JEP128

JEDEC JEP128

GUIDE FOR STANDARD PROBE PAD SIZES AND LAYOUTS FOR WAFER LEVEL ELECTRICAL TESTINGstandard by JEDEC Solid State Technology Association, 11/01/1996

JEDEC JEP122H

JEDEC JEP122H

Failure Mechanisms and Models for Semiconductor Devicesstandard by JEDEC Solid State Technology Association, 09/01/2016

Back to Top