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The purpose of this test method is to measure the thermal impedance of the IGBT (Insulated Gate Bipolar Transistor) under the specified conditions of applied voltage, current and pulse duration. The temperature sensitivity of the collector-emitter on voltage, VCE(on), is used as the junction temperature indicator. This is an alternative method to JEDEC Standard No. 24-6.
GUIDE FOR STANDARD PROBE PAD SIZES AND LAYOUTS FOR WAFER LEVEL ELECTRICAL TESTINGstandard by JEDEC Solid State Technology Association, 11/01/1996
Failure Mechanisms and Models for Semiconductor Devicesstandard by JEDEC Solid State Technology Association, 09/01/2016
METHODS OF MEASUREMENT FOR SEMICONDUCTOR LOGIC GATING MICROCIRCUITSstandard by JEDEC Solid State Technology Association, 01/01/1970
GUIDELINES FOR PARTICLE IMPACT NOISE DETECTION (PIND) TESTING, OPERATOR TRAINING, AND CERTIFICATIONstandard by JEDEC Solid State Technology Association, 10/01/2007