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This stress method is used to determine the effects of RF bias conditions and temperature on PowerAmplifier Modules (PAMs) over time. These conditions are intended to simulate the devices? operatingcondition in an accelerated way, and they are expected to be applied primarily for device qualification andreliability monitoring.
METHODS OF MEASUREMENT FOR SEMICONDUCTOR LOGIC GATING MICROCIRCUITSstandard by JEDEC Solid State Technology Association, 01/01/1970
GUIDELINES FOR PARTICLE IMPACT NOISE DETECTION (PIND) TESTING, OPERATOR TRAINING, AND CERTIFICATIONstandard by JEDEC Solid State Technology Association, 10/01/2007
GUIDE FOR STANDARD PROBE PAD SIZES AND LAYOUTS FOR WAFER LEVEL ELECTRICAL TESTINGstandard by JEDEC Solid State Technology Association, 11/01/1996
Failure Mechanisms and Models for Semiconductor Devicesstandard by JEDEC Solid State Technology Association, 09/01/2016