This part of IEC 63275 gives a test method to evaluate gate threshold voltage shift of silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) using room temperature readout after applying continuous positive gate-source voltage stress at elevated temperature. The proposed method accepts a certain amount of recovery by allowing large delay times between stress and measurement (up to 10 h).
Product Details
- Edition:
- 1.0
- Published:
- 04/01/2022
- ISBN(s):
- 9782832211015
- Number of Pages:
- 30
- File Size:
- 1 file , 1.1 MB
- Note:
- This product is unavailable in Ukraine, Russia, Belarus
