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This standard describes the measurement of signal diodes (IF <=500mA dc) reverse recovery times of less than 300 ns duration. It may, however, also be used for the measurement of longer recovery times. This standard is also intended to establish a method which to characterize the test fixture used for this measurement.
Failure Mechanisms and Models for Semiconductor Devicesstandard by JEDEC Solid State Technology Association, 09/01/2016
METHODS OF MEASUREMENT FOR SEMICONDUCTOR LOGIC GATING MICROCIRCUITSstandard by JEDEC Solid State Technology Association, 01/01/1970
GUIDELINES FOR PARTICLE IMPACT NOISE DETECTION (PIND) TESTING, OPERATOR TRAINING, AND CERTIFICATIONstandard by JEDEC Solid State Technology Association, 10/01/2007
GUIDE FOR STANDARD PROBE PAD SIZES AND LAYOUTS FOR WAFER LEVEL ELECTRICAL TESTINGstandard by JEDEC Solid State Technology Association, 11/01/1996